cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 1 general description features this high voltage mosfet uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. in addition, this advanced mosfet is designed to withstand high energy in avalanche and commutation modes. the new energy efficient design also offers a drain-to-source diode with a fast recovery time. designed for high voltage, high speed switching applications in power supplies, converters and pwm motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ? robust high voltage termination ? avalanche energy specified ? source-to-drain diode recovery time comparable to a discrete fast recovery diode ? diode is characterized for use in bridge circuits ? i dss and v ds (on) specified at el evated temperature pin configuration symbol to-251 front view 1 23 gate drain source to-92 front view 1 23 source gate drain d s g n-channel mosfet absolute maximum ratings rating symbol value unit drain to current to-251(continuous) to-92 (continuous) pulsed i d i dm 1.0 0.5 2.0 a gate-to-source voltage continue non-repetitive v gs v gsm 30 40 v v total power dissipation to-251 to-92 p d (max) 30 3 w operating and storage te mperature range t j , t stg -55 to 150 single pulse drain-to-source avalanche energy t j = 25 (v dd = 100v, v gs = 10v, i as = 2a, l = 10mh, r g = 25 ? ) e as 20 mj thermal resistance junction to case junction to ambient jc ja 1.0 62.5 /w maximum lead temperature for soldering pu rposes, 1/8? from case for 10 seconds t l 260
cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 2 ordering information part number package cmt01n60gn251 to-251 cmt01n60xn251* to-251 cmt01n60gn92 to-92 cmt01n60xn92* to-92 * note: g : suffix for pb free product x : suffix for halogen free product electrical characteristics unless otherwise specified, t j = 25 . cmt01n60 characteristic symbol min typ max units drain-source breakdown voltage (v gs = 0 v, i d = 250 a) v (br)dss 600 v drain-source leakage current (v ds = 600 v, v gs = 0 v) (v ds = 480 v, v gs = 0 v, t j = 125 ) i dss 1 3 ua gate-source leakage current-forward (v gsf = 30 v, v ds = 0 v) i gssf 100 na gate-source leakage current-reverse (v gsr =- 30 v, v ds = 0 v) i gssr 100 na gate threshold voltage (v ds = v gs , i d = 250 a) v gs(th) 2.0 4.0 v static drain-source on-resistance (v gs = 10 v, i d = 0.5a) * to-251 to-92 r ds(on) 11 ? forward transconductance (v ds R 50 v, i d = 0.5a) * g fs 320 mhos input capacitance c iss 210 pf output capacitance c oss 28 pf reverse transfer capacitance (v ds = 25 v, v gs = 0 v, f = 1.0 mhz) c rss 4.2 pf turn-on delay time t d(on) 8 ns rise time t r 21 ns turn-off delay time t d(off) 18 ns fall time (v dd = 300 v, i d = 1.0 a, v gs = 10 v, r g = 18 ? ) * t f 24 ns total gate charge q g 8.5 nc gate-source charge q gs 1.8 nc gate-drain charge (v ds = 400 v, i d = 1.0 a, v gs = 10 v)* q gd 4 nc internal drain inductance (measured from the drain lead 0.25? from package to center of die) l d 4.5 nh internal drain inductance (measured from the source lead 0.25? from package to source bond pad) l s 7.5 nh source-drain diode characteristics forward on-voltage(1) v sd 1.5 v forward turn-on time t on ** ns reverse recovery time (i s = 1.0 a, v gs = 0 v, d is /d t = 100a/ s) t rr 350 ns * pulse test: pulse width Q 300 s, duty cycle Q 2% ** negligible, dominated by circuit inductance
cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 3 typical electrical characteristics
cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 4
cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 5 package dimension to-251
cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 6 to-92
cmt01n60 p ower f ield e ffect t ransistor 2010/12/01 rev. 1.7 champion microelectronic corporation page 7 important notice champion microelectronic corporation (cmc) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its cust omers to obtain the latest version of relevant inform ation to verify, before placing orders, that the information being relied on is current. a few applications using integrated circuit products may involv e potential risks of death, personal injury, or severe property or environmental damage. cmc integrated ci rcuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. us e of cmc products in such applications is understood to be fully at the risk of the cust omer. in order to minimize risks associated with the customer?s applications, th e customer should provide adequate design and operating safeguards. hsinchu headquarter sales & marketing 5f-1, no. 11, park avenue ii, science-based industrial park, hsinchu city, taiwan 21f., no. 96, sec. 1, sintai 5th rd., sijhih city, taipei county 22102, taiwan r.o.c t e l : +886-3-567 9979 t e l : +886-2-2696 3558 f a x : +886-3-567 9909 f a x : +886-2-2696 3559
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